CMOS Pixel Sensor Response to Low Energy Electrons in Transmission Electron Microscopy
نویسندگان
چکیده
This letter presents the results of a study of the response of a test CMOS sensor with a radiation tolerant pixel cell design to 80 keV and 100 keV electrons. The point spread function is measured to be (13.0 ± 1.7) μm at 100 keV and (12.1 ± 1.6) μm at 80 keV, for 20 μm pixels. Results agree well with values predicted by a Geant-4 and dedicated charge collection simulation.
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